IL MUSEO NAZIONALE DI REGGIO CALABRIAFOTI G.1972, 79 p.Book

UN SEPOLCRO DI HIPPONION E UN NUOVO TESTO ORFICOFOTI G; PUGLIESE CARRATELLI G.PAROLA (LA) DEL PASSATO. 1974, Vol 29, Num 154-155, pp 91-126Article

A CLOSED-FLOW WATER CALORIC SYSTEM.FOTI TM; FOTI G.1977; J. NOTION. MED. ASS.; U.S.A.; DA. 1977; VOL. 69; NO 5; PP. 303-305; BIBL. 5 REF.Article

CRITICAL EVALUATION OF THE LINEAR APPROXIMATION OF THE INDIVIDUAL ADSORPTION ISOTHERMS OF BINARY LIQUID MIXTURES ON SOLID SURFACES.FOTI G; NAGY LG.1976; PERIOD. POLYTECH., CHEM. ENGNG; HONGR.; DA. 1976; VOL. 20; NO 2; PP. 107-114; BIBL. 4 REF.Article

LATTICE LOCATION OF BORON IMPLANTED SILICON AFTER LASER ANNEALING.FOTI G; DELLA MEA G.1978; LETTERE NUOVO CIMENTO; ITAL.; DA. 1978; VOL. 21; NO 3; PP. 89-93; BIBL. 16 REF.Article

STRUCTURE AND SELECTIVE SODIUM SORPTION OF HYDRATED ANTIMONY PENTOXIDENAGY LG; TOROK G; FOTI G et al.1979; ACTA CHIM. ACAD. SCI. HUNGAR.; HUN; DA. 1979; VOL. 101; NO 1-2; PP. 17-26; ABS. RUS; BIBL. 11 REF.Article

LASER ANNEALING OF PB-IMPLANTED SILICON.FOTI G; RIMINI E; CAMPISANO SU et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 47; NO 2; PP. 533-538; ABS. GER; BIBL. 25 REF.Article

H₂ PRODUCTION IN DENSE MOLECULAR CLOUDSPIRRONELLO V; STRAZZULLA G; FOTI G et al.1981; ASTRON. ASTROPHYS. (BERL.); ISSN 0004-6361; DEU; DA. 1981; VOL. 103; NO 1; PP. L5-L6; BIBL. 9 REF.Article

ANALYSE DES DIU BIOACTIFS PAR LA METHODE PIXE ET SEMFOTI A; FOTI AM; CALGAGNO L et al.1981; CONTRACEPT., FERT., SEX.; ISSN 0301-861X; FRA; DA. 1981; VOL. 9; NO 4; PP. 247-252; ABS. ENG; BIBL. 30 REF.Article

ON THE ESTIMATION OF ADSORPTION CAPACITIES FROM L/S EXCESS ISOTHERMS OF DILUTE SOLUTIONSSCHAY G; NAGY LG; FOTI G et al.1979; ACTA CHIM. ACAD. SCI. HUNGAR.; HUN; DA. 1979; VOL. 100; NO 1-4; PP. 289-303; BIBL. 10 REF.Article

LASER IRRADIATION OF FURNACE PREANNEALED (111) ION IMPLANTED SILICONCAMPISANO SU; FOTI G; SERVIDORI M et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 279-281; BIBL. 7 REF.Article

LASER PULSE ENERGY DEPENDENCE OF ANNEALING IN ION IMPLANTED SI AND GAAS SEMICONDUCTORS.RIMINI E; BAERI P; FOTI G et al.1978; PHYS. LETTERS, A; NETHERL.; DA. 1978; VOL. 65; NO 2; PP. 153-155; BIBL. 11 REF.Article

MOLECULAR AND ATOMIC DAMAGE IN GERMANIUM.FOTI G; VITALI G; DAVIES JA et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 32; NO 3-4; PP. 187-191; BIBL. 12 REF.Article

KINETIC STUDIES IN SOLID/LIQUID ADSORPTION EQUILIBRIUM USING THE ISOTOPIC MOLECULAR EXCHANGE METHODNAGY LG; FOTI G; SCHAY G et al.1980; J. COLLOID INTERFACE SCI.; USA; DA. 1980; VOL. 75; NO 2; PP. 338-345; BIBL. 2 REF.Article

POLYCRYSTAL SILICON RECOVERY BY MEANS OF A SHAPED LASER PULSE TRAINVITALI G; BERTOLOTTI M; FOTI G et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 1018-1019; BIBL. 8 REF.Article

H₂ PRODUCTION IN COMETSPIRRONELLO V; STRAZZULLA G; FOTI G et al.1983; ASTRONOMY AND ASTROPHYSICS; ISSN 0004-6361; DEU; DA. 1983; VOL. 118; NO 2; PP. 341-344; BIBL. 27 REF.Article

EROSION OF N₂ FROZEN GAS BY MEV HELIUM IONSPIRRONELLO V; STRAZZULLA G; FOTI G et al.1981; ASTROPHYS. SPACE SCI. LIBR.; ISSN 0067-0057; NLD; DA. 1981; VOL. 88; PP. 337-339; BIBL. 4 REF.Conference Paper

REPRODUCIBILITY OF THE ADSORPTION CAPACITY DETERMINED FROM ADSORPTION EXCESS ISOTHERMS OF LIQUID MIXTURESFOTI G; NAGY LG; SCHAY G et al.1973; ACTA CHIM. ACAD. SCI. HUNGAR.; HONGR.; DA. 1973; VOL. 76; NO 3; PP. 269-286; ABS. RUSSE; BIBL. 4 REF.Serial Issue

DETERMINATION DE LA CAPACITE D'ADSORPTION A PARTIR DES ISOTHERMES D'ADSORPTION D'UN MELANGE. II. ETUDE DE L'APPLICABILITE DE LA REPRESENTATION GENERALISEE D'EVERETT AUX SYST. DONNANT DES ISOTHERMES DES TYPES I, III, IV ET VFOTI G; NAGY LG; SCHAY G et al.1973; MAGYAR KEM. FOLYOIRAT; MAGYAR; DA. 1973; VOL. 79; NO 5; PP. 224-231; ABS. ANGL.; BIBL. 6 REF.Serial Issue

Note on the net retention volume in chromatography with a real gas as a carrierFOTI, G; KOVATS, E. S.HRC. Journal of high resolution chromatography. 2000, Vol 23, Num 2, pp 119-126, issn 0935-6304Article

CHEMICAL EFFECTS OF ION IMPLANTATION ON SOLID BENZENEPUGLISI O; PIGNATARO S; FOTI G et al.1980; CHEM. PHYS. LETTERS; NLD; DA. 1980; VOL. 70; NO 2; PP. 392-396; BIBL. 13 REF.Article

LASER ANNEALING OF BI-IMPLANTED ZN TEBONTEMPS A; CAMPISANO SU; FOTI G et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 542-544; BIBL. 7 REF.Article

SOLUTE TRAPPING BY MOVING INTERFACE IN ION-IMPLANTED SILICONCAMPISANO SU; FOTI G; BAERI P et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 8; PP. 719-722; BIBL. 19 REF.Article

STRUCTURE TRANSITIONS IN AMORPHOUS SILICON UNDER LASER IRRADIATIONBERTOLOTTI M; VITALI G; RIMINI E et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 1; PP. 259-265; BIBL. 34 REF.Article

GRAIN SIZE DEPENDENCE IN A SELF-IMPLANTED SILICON LAYER ON LASER IRRADIATION ENERGY DENSITYTSENG WF; MAYER JW; CAMPISANO SU et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 12; PP. 824-826; BIBL. 10 REF.Article